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The influence of internal stresses in tungsten-gate electrodes on the degradation of MOSFET characteristics caused by hot carriers

✍ Scribed by Yamamoto, N.; Iwata, S.; Kume, H.

Book ID: 114595919
Publisher: IEEE
Year: 1987
Tongue: English
Weight: 1020 KB
Volume: 34
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1987.22970

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