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The influence of interdiffusion on strain energy in the GaN–sapphire system

✍ Scribed by Sang Won Kang; Hyun Jong Park; Taewoong Kim; Todd Dann; Olga Kryliouk; Tim Anderson


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
237 KB
Volume
2
Category
Article
ISSN
1862-6351

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Interdiffusion processes in PbTe/PbTe/PbSe heterostructures were studied. Chalcogen diffusion coefficients were calculated from Se and Te concentration depth profiles recorded by the sputtered neutrals mass spectrometry technique. The deposition of the PbTe layer on the PbTe substrate reduces the ra