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The Influence of the Annealing Ambient on Strain and Doping in GaN during High-Temperature Processing

✍ Scribed by Kuball, M. ;Hayes, J. M. ;Bell, A. ;Harrison, I. ;Korakakis, D. ;Foxon, C. T.

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 151 KB
Volume: 176
Category: Article
ISSN: 0031-8965
DOI: 10.1002/(sici)1521-396x(199911)176:1<759::aid-pssa759>3.0.co;2-n

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✦ Synopsis

a), A. Bell (b), I. Harrison (b), D. Korakakis (b), and C.T. Foxon (b) (a) H. H.

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