GaN:Mg/AlGaN single heterostructures were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy (PAMBE) leading to the fabrication of light emitting diodes (LEDs). p-type is successfully achieved using Mg, obtaining hole concentrations in the range of 1 Â 10 17 cm À3 . Although an in
✦ LIBER ✦
Influence of Carbon Doping on the Photoconductivity in GaN Layers
✍ Scribed by M. Lisker; A. Krtschil; H. Witte; J. Christen; A. Krost; U. Birkle; S. Einfeldt; D. Hommel
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 148 KB
- Volume
- 216
- Category
- Article
- ISSN
- 0370-1972
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