โ Scribed by M.P. Belyansky; A.M. Gaskov; M.N. Rumyantseva; A.V. Strelkov
No coin nor oath required. For personal study only.
Interdiffusion processes in PbTe/PbTe/PbSe heterostructures were studied. Chalcogen diffusion coefficients were calculated from Se and Te concentration depth profiles recorded by the sputtered neutrals mass spectrometry technique. The deposition of the PbTe layer on the PbTe substrate reduces the rate of the chalcogen diffusion and improves the perfection of the structure.
๐ SIMILAR VOLUMES
## Experiments are reported on the chemical diffusion coefficients in the copper-nickel system for the two pure metals and also with the presence of thin (0.00002 in.) intermediate layers of Au, Sn, Zn or Cd. Au or Zn has small effect whilst Sn or Cd accelerate the rate of diffusion. Sn appears to
Chemical interdiffusion along a grain boundary in a semi-infinite bicrystal subjected to external stress normal to the boundary plane is considered. Plating out of diffusing atoms in the grain boundary partially relaxes the applied stress and modifies the driving force for diffusion. The resulting d