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The impact of impurity incorporation on heterojunction bipolar transistors grown by metalorganic molecular beam epitaxy

✍ Scribed by C.R. Abernathy; F. Ren; S.J. Pearton; P.W. Wisk; D.A. Bohling; G.T. Muhr; A.C. Jones; M. Stavola; D.M. Kozuch

No coin nor oath required. For personal study only.

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