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The effect of emitter layer variations on the current gain of AlGaAs-GaAs heterojunction bipolar transistors grown by chemical beam epitaxy

✍ Scribed by W.T. Moore; A.J. SpringThorpe; T.P. Lester; S. Eicher; R.K. Surridge; J. Hu; C.J. Miner

No coin nor oath required. For personal study only.

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