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Performance comparison of metalorganic vapor phase epitaxy grown C-doped GaAs/AlGaAs heterojunction bipolar transistor wafers between AsH3 and trimethylarsenic for the base layer growth

✍ Scribed by S. Tanaka; S. Kato; S. Hattori; S. Kojima; M. Ikeda; K. Kitamura


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
501 KB
Volume
145
Category
Article
ISSN
0022-0248

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