✦ LIBER ✦
Characterization of heavily carbon-doped GaAs with a hole concentration of the order of 1021 cm−3 grown by metalorganic molecular beam epitaxy and its application to InGaP/GaAs heterojunction bipolar transistors
✍ Scribed by Jun-ichi Shirakashi; Toshiaki Azuma; Fumihiko Fukuchi; Makoto Konagai; Kiyoshi Takahashi
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 483 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0022-0248
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