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Quantitative correlation between oxygen impurity and current gain β of AlGaAs/GaAs heterojunction bipolar transistors grown by molecular beam epitaxy

✍ Scribed by Shigekazu Izumi; Masayuki Sakai; Teruyuki Shimura; Mari Tsugami; Norio Hayafuji; Takuji Sonoda; Saburo Takamiya; Wataru Susaki; Shigeru Mitsui


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
427 KB
Volume
150
Category
Article
ISSN
0022-0248

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