✦ LIBER ✦

Growth and characterization of AlGaAsGaAs heterojunction bipolar transistor on GaAs (111)B substrate by molecular beam epitaxy

✍ Scribed by Tsuen-Lin Lee; Wen-Ding Chu; Hao-Hsiung Lin

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 662 KB
Volume: 39
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(96)00023-8

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Initial growth of GaAs on Si(111) substr

Initial growth of GaAs on Si(111) substrates by molecular beam epitaxy

✍ Tokuo Yodo; Masao Tamura 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 477 KB

The molecular beam epitaxial growth of I

The molecular beam epitaxial growth of InAs on GaAs(111)B and (100) oriented substrates; a comparative growth study

✍ S.E. Hooper; D.I. Westwood; D.A. Woolf; R.H. Williams 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 357 KB

Quantitative correlation between oxygen

Quantitative correlation between oxygen impurity and current gain β of AlGaAs/GaAs heterojunction bipolar transistors grown by molecular beam epitaxy

✍ Shigekazu Izumi; Masayuki Sakai; Teruyuki Shimura; Mari Tsugami; Norio Hayafuji; 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 427 KB

Fabrication of quantum wires and dots on

Fabrication of quantum wires and dots on GaAs (111)A patterned substrates by molecular beam epitaxy

✍ T. Takebe; T. Watanabe; K. Fujita 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 195 KB

Flat GaAs/AlGaAs multilayers without any extra facets were successfully grown on ridgetype triangles with (021)-related sidewalls having an inverted mesa on GaAs (111)A substrates by molecular beam epitaxy. The result was obtained on the basis of the large difference in the growth rate between the [

Growth of ZnSe films on GaAs 〈100〉 subst

Growth of ZnSe films on GaAs 〈100〉 substrates by conventional and pulsed molecular beam epitaxy

✍ Jarmo Lilja; Jari Keskinen; Harry Asonen; Markus Pessa 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 283 KB

The nucleation and growth by molecular b

The nucleation and growth by molecular beam epitaxy of InAs on GaAs (110) misoriented substrates

✍ X.M. Zhang; D.W. Pashley; I. Kamiya; J.H. Neave; B.A. Joyce 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 825 KB