Metalorganic molecular beam epitaxial growth of InP and InGaP with tertiarybutylphosphine for the application of carbon-doped base heterojunction bipolar transistors

✍ Scribed by Jun-ichi Shirakashi; Ricardo T. Yoshioka; Toshiaki Azuma; Fumihiko Fukuchi; Makoto Konagai; Kiyoshi Takahashi

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 555 KB
• Volume: 145
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(94)91167-3