Molecular beam epitaxy growth for a heavily-doped thin base layer of heterojunction bipolar transistors used for high-speed integrated circuits

✍ Scribed by N. Iizuka; K. Tsuda; T. Nozu; T. Sugiyama; Y. Kuriyama; M. Obara

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 378 KB
• Volume: 150
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(95)80148-6