✦ LIBER ✦

The growth of Si1−x−yGexCyalloys with high carbon content by ultra-high vacuum chemical vapor deposition

✍ Scribed by Jingyun Huang; Zhizhen Ye; Zhen Qi; Duanlin Que

Book ID: 110296295
Publisher: Springer
Year: 2001
Tongue: English
Weight: 106 KB
Volume: 20
Category: Article
ISSN: 0261-8028
DOI: 10.1023/a:1010977331722

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth of SiGe/Si multiple quantum wells

Growth of SiGe/Si multiple quantum wells by ultra-high-vacuum electron cyclotron resonance chemical vapor deposition

✍ Sung-Jae Joo; Euijoon Yoon; Seok-Hee Hwang; Ki-Woong Whang; Sang Kook Chun; Youn 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 290 KB

Study of surface roughening of tensily s

Study of surface roughening of tensily strained Si1−x−yGexCy films grown by ultra high vacuum-chemical vapor deposition

✍ C Calmes; D Bouchier; D Debarre; V Le Thanh; C Clerc 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 587 KB

High concentration n-type doping in Si l

High concentration n-type doping in Si layers epitaxially grown by ultra-high vacuum chemical vapor deposition with cracking heater

✍ Naoharu Sugiyama 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 330 KB

Ultra-high-vacuum chemical vapor deposit

Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1−x−yGexCy thin films on Si(0 0 1) with ethylene (C2H4) precursor as carbon source

✍ P.S. Chen; S.W. Lee; Y.H. Liu; M.H. Lee; M.-J. Tsai; C.W. Liu 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 359 KB

The incorporation of substitutional carbon (C sub ) in low-temperature epitaxial Si 1ÀxÀy Ge x C y thin films using SiH 4 , GeH 4 and C 2 H 4 by ultra-high-vacuum chemical vapor deposition was investigated in this work. The Si 1ÀxÀy Ge x C y alloys have been grown at a temperature range from 550 to

Modified growth of Ge quantum dots using

Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition

✍ S.W. Lee; P.S. Chen; S.L. Cheng; M.H. Lee; H.T. Chang; C.-H. Lee; C.W. Liu 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 679 KB

Morphological Instability of High Ge Per

Morphological Instability of High Ge Percent SiGe Films Grown by Ultra-High Vacuum Chemical Vapor Deposition

✍ Hart, J.; Hazbun, R.; Nakos, J.; Siegel, D.; Funch, C.; Kolodzey, J.; Harame, D. 📂 Article 📅 2014 🏛 The Electrochemical Society 🌐 English ⚖ 370 KB