High concentration n-type doping in Si layers epitaxially grown by ultra-high vacuum chemical vapor deposition with cracking heater

✍ Scribed by Naoharu Sugiyama

• Book ID: 108342309
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 330 KB
• Volume: 172
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/s0022-0248(96)00748-8