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Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition

โœ Scribed by S.W. Lee; P.S. Chen; S.L. Cheng; M.H. Lee; H.T. Chang; C.-H. Lee; C.W. Liu


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
679 KB
Volume
254
Category
Article
ISSN
0169-4332

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Ultra-high-vacuum chemical vapor deposit
โœ P.S. Chen; S.W. Lee; Y.H. Liu; M.H. Lee; M.-J. Tsai; C.W. Liu ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 359 KB

The incorporation of substitutional carbon (C sub ) in low-temperature epitaxial Si 1ร€xร€y Ge x C y thin films using SiH 4 , GeH 4 and C 2 H 4 by ultra-high-vacuum chemical vapor deposition was investigated in this work. The Si 1ร€xร€y Ge x C y alloys have been grown at a temperature range from 550 to