✦ LIBER ✦

Study of surface roughening of tensily strained Si1−x−yGexCy films grown by ultra high vacuum-chemical vapor deposition

✍ Scribed by C Calmes; D Bouchier; D Debarre; V Le Thanh; C Clerc

Book ID: 108388570
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 587 KB
Volume: 428
Category: Article
ISSN: 0040-6090
DOI: 10.1016/s0040-6090(02)01246-4

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Roughening mechanisms of tensily straine

Roughening mechanisms of tensily strained Si1−x−yGexCy films grown by UHV-CVD: evidence of a carbon surface diffusion related mechanism

✍ Cyril Calmes; Daniel Bouchier; Catherine Clerc; Yulin Zheng 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 322 KB

The growth of Si1−x−yGexCyalloys with hi

The growth of Si1−x−yGexCyalloys with high carbon content by ultra-high vacuum chemical vapor deposition

✍ Jingyun Huang; Zhizhen Ye; Zhen Qi; Duanlin Que 📂 Article 📅 2001 🏛 Springer 🌐 English ⚖ 106 KB

Morphological Instability of High Ge Per

Morphological Instability of High Ge Percent SiGe Films Grown by Ultra-High Vacuum Chemical Vapor Deposition

✍ Hart, J.; Hazbun, R.; Nakos, J.; Siegel, D.; Funch, C.; Kolodzey, J.; Harame, D. 📂 Article 📅 2014 🏛 The Electrochemical Society 🌐 English ⚖ 370 KB

Ultra-high-vacuum chemical vapor deposit

Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1−x−yGexCy thin films on Si(0 0 1) with ethylene (C2H4) precursor as carbon source

✍ P.S. Chen; S.W. Lee; Y.H. Liu; M.H. Lee; M.-J. Tsai; C.W. Liu 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 359 KB

The incorporation of substitutional carbon (C sub ) in low-temperature epitaxial Si 1ÀxÀy Ge x C y thin films using SiH 4 , GeH 4 and C 2 H 4 by ultra-high-vacuum chemical vapor deposition was investigated in this work. The Si 1ÀxÀy Ge x C y alloys have been grown at a temperature range from 550 to