✦ LIBER ✦

THE FABRICATION AND CHARACTERIZATION OF METAL-OXIDE-SILICON CAPACITORS AND FIELD-EFFECT TRANSISTORS USING Dy 2 O 3 AND Sm 2 O 3 GATE DIELECTRICS

✍ Scribed by Hwang, Yu-Ren; Chang, Ingram Yin-ku; Wang, Ming-tsong; Lee, Joseph Ya-min

Book ID: 120419514
Publisher: Taylor and Francis Group
Year: 2008
Tongue: English
Weight: 551 KB
Volume: 97
Category: Article
ISSN: 1058-4587
DOI: 10.1080/10584580802088892

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical characteristics and reliabili

Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with Dy[sub 2]O[sub 3] gate dielectric

✍ Chang, Sheng-Chih; Deng, Shao-You; Lee, Joseph Ya-Min 📂 Article 📅 2006 🏛 American Institute of Physics 🌐 English ⚖ 323 KB

The temperature dependence of the electr

The temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide-semiconductor field effect transistors with ZrO[sub 2] and Sm[sub 2]O[sub 3] gate dielectrics

✍ Ho, Hsiao-shuo; Chang, Ingram Yin-ku; Lee, Joseph Ya-min 📂 Article 📅 2007 🏛 American Institute of Physics 🌐 English ⚖ 580 KB

Memory Effect of Metal-Insulator-Silicon

Memory Effect of Metal-Insulator-Silicon Capacitor with HfO2-Al2O3Multilayer and Hafnium Nitride Gate

✍ Shi-Jin Ding; Min Zhang; Wei Chen; David Wei Zhang; Li-Kang Wang 📂 Article 📅 2007 🏛 Springer US 🌐 English ⚖ 416 KB

The properties of GaAs-Al2O3 and InP-Al2

The properties of GaAs-Al2O3 and InP-Al2O3 interfaces and the fabrication of MIS field-effect transistors

✍ K. Kamimura; Y. Sakai 📂 Article 📅 1979 🏛 Elsevier Science 🌐 English ⚖ 900 KB

Electrical properties of metal–HfO2–sili

Electrical properties of metal–HfO2–silicon system measured from metal–insulator–semiconductor capacitors and metal–insulator–semiconductor field–effect transistors using HfO2 gate dielectric

✍ Fu-Chien Chiu; Shun-An Lin; Joseph Ya-min Lee 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 245 KB

Physical and electrical characterization

Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al[sub 2]O[sub 3] gate dielectric

✍ Garcia-Gutierrez, Domingo I. ;Shahrjerdi, Davood ;Kaushik, Vidya ;Banerjee, Sanj 📂 Article 📅 2009 🏛 AVS (American Vacuum Society) 🌐 English ⚖ 727 KB