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The properties of GaAs-Al2O3 and InP-Al2O3 interfaces and the fabrication of MIS field-effect transistors

✍ Scribed by K. Kamimura; Y. Sakai


Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
900 KB
Volume
56
Category
Article
ISSN
0040-6090

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