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The electrical characteristics of 4H-SiC schottky diodes after inductively coupled plasma etching

✍ Scribed by N. O. V. Plank; Liudi Jiang; A. M. Gundlach; R. Cheung

Book ID
107453090
Publisher
Springer US
Year
2003
Tongue
English
Weight
195 KB
Volume
32
Category
Article
ISSN
0361-5235

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## Abstract The analysis of β€œnonideal” behaviour in current–voltage characteristics of fabricated Schottky diodes on 4H–SiC is carried out. An accurate theoretical modelling of the effect of the presence of inhomogeneities on the electron transport across the metal‐semiconductor interface is applie