The electrical and material characterization of hafnium oxynitride gate dielectrics with TaN-gate electrode

✍ Scribed by Chang Seok Kang; Hag-Ju Cho; Rino Choi; Young-Hee Kim; Chang Yong Kang; Se Jong Rhee; Changhwan Choi; Akbar, M.S.; Lee, J.C.

• Book ID: 114617315
• Publisher: IEEE
• Year: 2004
• Tongue: English
• Weight: 433 KB
• Volume: 51
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2003.821707