✦ LIBER ✦
Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability
✍ Scribed by Quevedo-Lopez, M. A.; Krishnan, S. A.; Kirsch, P. D.; Pant, G.; Gnade, B. E.; Wallace, R. M.
- Book ID
- 119968448
- Publisher
- American Institute of Physics
- Year
- 2005
- Tongue
- English
- Weight
- 378 KB
- Volume
- 87
- Category
- Article
- ISSN
- 0003-6951
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