Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing

✍ Scribed by Nieh, R.E.; Chang Seok Kang; Hag-Ju Cho; Onishi, K.; Rino Choi; Krishnan, S.; Jeong Hee Han; Young-Hee Kim; Akbar, M.S.; Lee, J.C.

• Book ID: 114616979
• Publisher: IEEE
• Year: 2003
• Tongue: English
• Weight: 561 KB
• Volume: 50
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2002.808531