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Characterization of ultrathin oxynitride (18-21 A) gate dielectrics by NH3 nitridation and N2O RTA treatment

✍ Scribed by Tung Ming Pan; Tan Fu Lei; Huang Chun Wen; Tien Sheng Chao

Book ID: 114538655
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 140 KB
Volume: 48
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.918238

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