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The effects of Si doping on dislocation movement and tensile stress in GaN films

✍ Scribed by Moram, M. A.; Kappers, M. J.; Massabuau, F.; Oliver, R. A.; Humphreys, C. J.

Book ID: 120828841
Publisher: American Institute of Physics
Year: 2011
Tongue: English
Weight: 858 KB
Volume: 109
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3553841

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