✦ LIBER ✦

Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire

✍ Scribed by Ruvimov, Sergei; Liliental-Weber, Zuzanna; Suski, Tadeusz; Ager, Joel W.; Washburn, Jack; Krueger, Joachim; Kisielowski, Christian; Weber, Eicke R.; Amano, H.; Akasaki, I.

Book ID: 126130008
Publisher: American Institute of Physics
Year: 1996
Tongue: English
Weight: 440 KB
Volume: 69
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.117105

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Influence of Si Doping on the Subgrain S

Influence of Si Doping on the Subgrain Structure of GaN Grown on AlN/Si(111)

✍ Molina, S. I. ;Sánchez, A. M. ;Pacheco, F. J. ;García, R. ;Sánchez-García, M. A. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 255 KB 👁 2 views

This work presents a detailed study of the subgrain structure of Si doped GaN grown on AlN buffered (111)Si substrates by plasma-assisted Molecular Beam Epitaxy. Si doping increases from an unintentionally undoped sample up to 1.7 Â 10 19 cm -3 . The subgrain size distribution fits quite precisely a

Effect of annealing on neutron-transmuta

Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates

✍ S. H. Park; T. W. Kang; T. W. Kim 📂 Article 📅 2004 🏛 Springer 🌐 English ⚖ 228 KB

Comparison of the microstructural charac

Comparison of the microstructural characterizations of GaN layers grown on Si (111) and on sapphire

✍ Shin, Huiyoun; Jeon, Kisung; Jang, Youngil; Gang, Mingu; Choi, Myungshin; Park, 📂 Article 📅 2013 🏛 The Korean Physical Society 🌐 English ⚖ 256 KB

The effects of Si doping on dislocation

The effects of Si doping on dislocation movement and tensile stress in GaN films

✍ Moram, M. A.; Kappers, M. J.; Massabuau, F.; Oliver, R. A.; Humphreys, C. J. 📂 Article 📅 2011 🏛 American Institute of Physics 🌐 English ⚖ 858 KB

Improvement of electrical property of Si

Improvement of electrical property of Si-doped GaN grown on -plane sapphire by metalorganic vapor-phase epitaxy

✍ K. Kusakabe; T. Furuzuki; K. Ohkawa 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 164 KB

Influences of periodic Si delta-doping o

Influences of periodic Si delta-doping on the characteristics of n-GaN grown on Si (111) substrate

✍ Xiang, Peng; Yang, Yibin; Liu, Minggang; Chen, Weijie; Han, Xiaobiao; Lin, Yan; 📂 Article 📅 2014 🏛 Elsevier Science 🌐 English ⚖ 588 KB