This work presents a detailed study of the subgrain structure of Si doped GaN grown on AlN buffered (111)Si substrates by plasma-assisted Molecular Beam Epitaxy. Si doping increases from an unintentionally undoped sample up to 1.7 Γ 10 19 cm -3 . The subgrain size distribution fits quite precisely a
β¦ LIBER β¦
Influences of periodic Si delta-doping on the characteristics of n-GaN grown on Si (111) substrate
β Scribed by Xiang, Peng; Yang, Yibin; Liu, Minggang; Chen, Weijie; Han, Xiaobiao; Lin, Yan; Hu, Gangwei; Hu, Guoheng; Luo, Hui; Jiang, Jianliang; Lin, Jiali; Wu, Zhisheng; Liu, Yang; Zhang, Baijun
- Book ID
- 125475419
- Publisher
- Elsevier Science
- Year
- 2014
- Tongue
- English
- Weight
- 588 KB
- Volume
- 387
- Category
- Article
- ISSN
- 0022-0248
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