The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si (111) substrates
β Scribed by Zhe, Liu; Xiao-Liang, Wang; Jun-Xi, Wang; Guo-Xin, Hu; Lun-Chun, Guo; Jin-Min, Li
- Book ID
- 121354235
- Publisher
- Institute of Physics
- Year
- 2007
- Tongue
- English
- Weight
- 957 KB
- Volume
- 16
- Category
- Article
- ISSN
- 1009-1963
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This work presents a detailed study of the subgrain structure of Si doped GaN grown on AlN buffered (111)Si substrates by plasma-assisted Molecular Beam Epitaxy. Si doping increases from an unintentionally undoped sample up to 1.7 Γ 10 19 cm -3 . The subgrain size distribution fits quite precisely a
We present a study on the material properties of GaN films grown on (111) silicon substrates by low-pressure metalorganic chemical vapour deposition using AlN buffer layers. This buffer layer is optimised with respect to growth temperature and time for the optical and structural properties of the Ga