## Abstract Crackβfree GaN films have been achieved by inserting an Inβdoped lowβtemperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants __c__ and __a__ obtained by Xβray diffraction analysis shows that indium doping i
β¦ LIBER β¦
Strain states in GaN films grown on Si(111) and Si(110) substrates using a thin AlN/GaN superlattice interlayer
β Scribed by Shen, X. Q.; Takahashi, T.; Ide, T.; Shimizu, M.
- Book ID
- 121871478
- Publisher
- John Wiley and Sons
- Year
- 2014
- Tongue
- English
- Weight
- 659 KB
- Volume
- 11
- Category
- Article
- ISSN
- 1862-6351
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