GaN films grown by vapor-phase epitaxy in a hydride-chloride system on Si(111) substrates with AlN buffer sublayers

✍ Scribed by V. N. Bessolov; V. Yu. Davydov; Yu. V. Zhilyaev; E. V. Konenkova; G. N. Mosina; S. D. Raevskii; S. N. Rodin; Sh. Sharofidinov; M. P. Shcheglov; Hee Seok Park; Masayoshi Koike

• Book ID: 110144719
• Publisher: SP MAIK Nauka/Interperiodica
• Year: 2005
• Tongue: English
• Weight: 78 KB
• Volume: 31
• Category: Article
• ISSN: 1063-7850
• DOI: 10.1134/1.2136951