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Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)

✍ Scribed by Liu, W.; Zhu, J. J.; Jiang, D. S.; Yang, H.; Wang, J. F.

Book ID: 121416759
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 313 KB
Volume: 90
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2430396

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