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Strain effects in epitaxial GaN grown on AlN-buffered Si(111)

✍ Scribed by Meng, W. J.; Perry, T. A.

Book ID: 120553697
Publisher: American Institute of Physics
Year: 1994
Tongue: English
Weight: 792 KB
Volume: 76
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.357916

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This work presents a detailed study of the subgrain structure of Si doped GaN grown on AlN buffered (111)Si substrates by plasma-assisted Molecular Beam Epitaxy. Si doping increases from an unintentionally undoped sample up to 1.7 Â 10 19 cm -3 . The subgrain size distribution fits quite precisely a