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Influence of V/III Ratio of Low Temperature Grown AlN Interlayer on the Growth of GaN on Si$\langle 111\rangle$ Substrate

✍ Scribed by Luo, Ruihong; Xiang, Peng; Liu, Minggang; Chen, Tufu; He, Zhiyuan; Fan, Bingfeng; Zhao, Yu; Xian, Yulun; Huang, Shanjin; Zheng, Zhiyuan; Wu, Zhisheng; Jiang, Hao; Wang, Gang; Liu, Yang; Zhang, Baijun

Book ID: 124097611
Publisher: Institute of Pure and Applied Physics
Year: 2011
Tongue: English
Weight: 469 KB
Volume: 50
Category: Article
ISSN: 0021-4922
DOI: 10.1143/JJAP.50.105501

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