Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling

✍ Scribed by Lu, Y.; Cong, G. W.; Liu, X. L.; Lu, D. C.; Wang, Z. G.; Wu, M. F.

• Book ID: 121401252
• Publisher: American Institute of Physics
• Year: 2004
• Tongue: English
• Weight: 258 KB
• Volume: 85
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.1830679