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Depth dependent tetragonal distortion of a GaN epilayer with an AlN interlayer on Si(111) studied by Rutherford backscattering/channeling

✍ Scribed by Wang, Huan; Hou, Lina; Yao, Shude

No coin nor oath required. For personal study only.

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Depth distribution of the strain in the

✍ Lu, Y.; Cong, G. W.; Liu, X. L.; Lu, D. C.; Wang, Z. G.; Wu, M. F. 📂 Article 📅 2004 🏛 American Institute of Physics 🌐 English ⚖ 258 KB