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Crystallographic tilting of AlN/GaN layers on miscut Si (111) substrates

โœ Scribed by Wang, Li; Huang, Fusheng; Cui, Zhiyong; Wu, Qin; Liu, Wen; Zheng, Changda; Mao, Qinghua; Xiong, Chuanbing; Jiang, Fengyi

Book ID
121324105
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
546 KB
Volume
115
Category
Article
ISSN
0167-577X

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We present a study on the material properties of GaN films grown on (111) silicon substrates by low-pressure metalorganic chemical vapour deposition using AlN buffer layers. This buffer layer is optimised with respect to growth temperature and time for the optical and structural properties of the Ga