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Comparison of the microstructural characterizations of GaN layers grown on Si (111) and on sapphire

✍ Scribed by Shin, Huiyoun; Jeon, Kisung; Jang, Youngil; Gang, Mingu; Choi, Myungshin; Park, Wonhwa; Park, Kyuho

Book ID
121608585
Publisher
The Korean Physical Society
Year
2013
Tongue
English
Weight
256 KB
Volume
63
Category
Article
ISSN
0374-4884

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Comparison of GaN Buffer Layers Grown on
Comparison of GaN Buffer Layers Grown on GaAs (111)A and (111)B Surfaces
✍ Kumagai, Y. ;Murakami, H. ;Seki, H. ;Koukitu, A. πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 104 KB πŸ‘ 1 views

Comparison of low-temperature (LT-) GaN buffer layers grown on GaAs {111} surfaces has been performed. LT-GaN buffer layers of 0-160 nm thickness were grown simultaneously both on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) at 550 C. On GaAs (111)A