✦ LIBER ✦

Comparison of HVPE GaN films and substrates grown on sapphire and on MOCVD GaN epi-layer

✍ Scribed by H.M Kim; T.W Kang; J.E Oh

Book ID: 117356119
Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 971 KB
Volume: 46
Category: Article
ISSN: 0167-577X
DOI: 10.1016/s0167-577x(00)00189-0

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Thickness Influence on Optical and Morph

Thickness Influence on Optical and Morphological Properties of HVPE GaN Layers Grown on MOCVD GaN Layers

✍ Trassoudaine, A. ;Siozade, L. ;Aujol, E. ;Cadoret, R. ;Castelluci, D. ;Vasson, A 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 131 KB 👁 2 views

Comparison of the strain of GaN films gr

Comparison of the strain of GaN films grown on MOCVD-GaN/Al2O3 and MOCVD-GaN/SiC samples by HVPE growth

✍ Lei Zhang; Yongliang Shao; Xiaopeng Hao; Yongzhong Wu; Shuang Qu; Xiufang Chen; 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 622 KB

High quality MOCVD GaN film grown on sap

High quality MOCVD GaN film grown on sapphire substrates using HT-AlN buffer layer

✍ B. Potì; M.A. Tagliente; A. Passaseo 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 143 KB

MOCVD-Epitaxy on Free-Standing HVPE-GaN

MOCVD-Epitaxy on Free-Standing HVPE-GaN Substrates

✍ Miskys, C. R. ;Kelly, M. K. ;Ambacher, O. ;Stutzmann, M. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 147 KB 👁 1 views

EBIC observation of n-GaN grown on sapph

EBIC observation of n-GaN grown on sapphire substrates by MOCVD

✍ Yamamoto, Kensaku; Ishikawa, Hiroyasu; Egawa, Takashi; Jimbo, Takashi; Umeno, Ma 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 164 KB

Characterization of an AlN buffer layer

Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD

✍ S. Çörekçi; M. K. Öztürk; A. Bengi; M. Çakmak; S. Özçelik; E. Özbay 📂 Article 📅 2010 🏛 Springer 🌐 English ⚖ 643 KB