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MOCVD-Epitaxy on Free-Standing HVPE-GaN Substrates

✍ Scribed by Miskys, C. R. ;Kelly, M. K. ;Ambacher, O. ;Stutzmann, M.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
147 KB
Volume
176
Category
Article
ISSN
0031-8965

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Infrared reflectivity measurements were performed on undoped and Si-doped GaN films grown on sapphire. After analysing the substrate reflectance accurately, a good fit to the measured reflectance has been achieved. By comparison of the measured and calculated spectra, it becomes possible to identify