Comparison of the strain of GaN films grown on MOCVD-GaN/Al2O3 and MOCVD-GaN/SiC samples by HVPE growth

✍ Scribed by Lei Zhang; Yongliang Shao; Xiaopeng Hao; Yongzhong Wu; Shuang Qu; Xiufang Chen; Xiangang Xu

• Book ID: 116630004
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 622 KB
• Volume: 334
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2011.08.035