Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

✍ Scribed by Desmaris, V.; Rudzinski, M.; Rorsman, N.; Hageman, P.R.; Larsen, P.K.; Zirath, H.; Rodle, T.C.; Jos, H.F.F.

• Book ID: 114618399
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 275 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.880825