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Structural and optical properties of GaN thin films grown on Al2O3 substrates by MOCVD at different reactor pressures

✍ Scribed by A. Guillén-Cervantes; Z. Rivera-Álvarez; M. López-López; A. Ponce-Pedraza; C. Guarneros; V.M. Sánchez-Reséndiz

No coin nor oath required. For personal study only.

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