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Comment on âThe effects of Si doping on dislocation movement and tensile stress in GaN filmsâ [J. Appl. Phys. 109, 073509 (2011)]

✍ Scribed by Dadgar, A.; Krost, A.

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Response to âComment on âThe effects

✍ Moram, M. A.; Kappers, M. J.; Massabuau, F.; Oliver, R. A.; Humphreys, C. J. 📂 Article 📅 2011 🏛 American Institute of Physics 🌐 English ⚖ 333 KB

The effects of Si doping on dislocation

✍ Moram, M. A.; Kappers, M. J.; Massabuau, F.; Oliver, R. A.; Humphreys, C. J. 📂 Article 📅 2011 🏛 American Institute of Physics 🌐 English ⚖ 858 KB

Comment on âThe effects of Si doping on dislocation movement and tensile stress in GaN filmsâ [J. Appl. Phys. 109, 073509 (2011)]