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Response to âComment on âThe effects of Si doping on dislocation movement and tensile stress in GaN filmsââ [J. Appl. Phys. 109, 073509 (2011)]

✍ Scribed by Moram, M. A.; Kappers, M. J.; Massabuau, F.; Oliver, R. A.; Humphreys, C. J.

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Response to âComment on âThe effects of Si doping on dislocation movement and tensile stress in GaN filmsââ [J. Appl. Phys. 109, 073509 (2011)]