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Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1−xN

✍ Scribed by I.C. Manning; X. Weng; M.A. Fanton; D.W. Snyder; J.M. Redwing

Book ID: 108165999
Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 482 KB
Volume: 312
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2009.11.024

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