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Influence of Al content on electrical and structural properties of Si-doped AlxGa1–xN/GaN HEMT structures

✍ Scribed by Cuimei Wang; Xiaoliang Wang; Guoxin Hu; Junxi Wang; Jianping Li

Book ID
104557906
Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
336 KB
Volume
3
Category
Article
ISSN
1862-6351

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## Abstract High electron mobility transistor material and device properties based on Al~__x__~Ga~1−__x__~N/GaN heterostructures with an Al‐content ranging from 12 to 35% are presented. The Al‐content of the low pressure metal‐organic vapor‐phase epitaxy grown samples on semi‐insulating SiC and sap