𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Improvement of Electrical Properties of MOCVD Grown AlxGa1—xN/GaN Heterostructure with Isoelectronic Al-Doped Channel

✍ Scribed by Jae-Hoon Lee; Jong-Hyun Kim; Sung-Bum Bae; Kyu-Suk Lee; Jae-Seung Lee; Jong-Wook Kim; Sung-Ho Hahm; Jung-Hee Lee

Book ID
104556448
Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
123 KB
Volume
0
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth and electrical properties of AlxG
Growth and electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content
✍ K. Köhler; S. Müller; P. Waltereit; L. Kirste; H. P. Menner; W. Bronner; R. Quay 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 376 KB

## Abstract High electron mobility transistor material and device properties based on Al~__x__~Ga~1−__x__~N/GaN heterostructures with an Al‐content ranging from 12 to 35% are presented. The Al‐content of the low pressure metal‐organic vapor‐phase epitaxy grown samples on semi‐insulating SiC and sap