Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure

✍ Scribed by Cuimei Wang; Xiaoliang Wang; Guoxin Hu; Junxi Wang; Jianping Li; Zhanguo Wang

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 542 KB
• Volume: 253
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2006.01.017