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The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure

✍ Scribed by Lunchun Guo; Xiaoliang Wang; Cuimei Wang; Hongling Xiao; Junxue Ran; Weijun Luo; Xiaoyan Wang; Baozhu Wang; Cebao Fang; Guoxin Hu

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
152 KB
Volume
39
Category
Article
ISSN
0026-2692

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