A low-junction-temperature light emitting diode (LED) by selectively ion-implantation in part of the ptype GaN layer is demonstrated. The junction temperature extracted from a forward voltage method of an ion-implanted LED is significantly lower than that of a conventional LED. Furthermore, the line
โฆ LIBER โฆ
The effect of temperature on the recombination rate of AlGaN/GaN light emitting diodes
โ Scribed by Sara Shishehchi; Asghar Asgari; Reza Kheradmand
- Book ID
- 106489389
- Publisher
- Springer
- Year
- 2009
- Tongue
- English
- Weight
- 188 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0306-8919
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Effect of selective ion-implanted p-GaN
โ
Yun-Wei Cheng; Hung-Hsien Chen; Min-Yung Ke; Cheng-Pin Chen; Jian Jang Huang
๐
Article
๐
2009
๐
Elsevier Science
๐
English
โ 344 KB
Influence of AlGaN/GaN superlattice inse
โ
Cheng-Liang Wang; Ming-Chang Tsai; Jyh-Rong Gong; Wei-Tsai Liao; Ping-Yuan Lin;
๐
Article
๐
2007
๐
Elsevier Science
๐
English
โ 383 KB
Ten-Milliwatt Operation of an AlGaN-Base
โ
Nishida, T. ;Kobayashi, N.
๐
Article
๐
2001
๐
John Wiley and Sons
๐
English
โ 503 KB
Ten-milliwatt output at 352 nm wavelength is obtained in the room-temperature cw operation of an AlGaN-based ultraviolet light emitting diode. The maximum internal quantum efficiency is estimated to be more than 80%. We also demonstrate the excitation of fluorescence of three basal colors by this wa
Influence of growth temperature and grow
โ
Wonseok Lee; Jae Limb; Jae-Hyun Ryou; Dongwon Yoo; Theodore Chung; Russell D. Du
๐
Article
๐
2006
๐
Springer US
๐
English
โ 167 KB
Impact of Internal Electric Field and Lo
โ
Chichibu, S.F. ;Sota, T. ;Wada, K. ;Brandt, O. ;Ploog, K.H. ;DenBaars, S.P. ;Nak
๐
Article
๐
2001
๐
John Wiley and Sons
๐
English
โ 151 KB
๐ 3 views
Reduction of efficiency droop in GaInN/G
โ
An Mao; Jaehee Cho; E. Fred Schubert; Joong Kon Son; Cheolsoo Sone; Woo Jin Ha;
๐
Article
๐
2012
๐
The Korean Institute of Metals and Materials
๐
English
โ 308 KB